P N Suganthan - definition. What is P N Suganthan
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  3. P N Suganthan

%ما هو (من)٪ 1 - تعريف

A DIODE WITH A WIDE, UNDOPED INTRINSIC SEMICONDUCTOR REGION BETWEEN A P-TYPE SEMICONDUCTOR AND AN N-TYPE SEMICONDUCTOR REGION
P-i-n diode; Pin diode; P-i-n and n-i-p; P-i-n; N-i-p; PIN photodiode; P-I-N; P-i-n junction
  • An RF microwave PIN diode attenuator
  • A PIN diode RF microwave switch

P. N. Suganthan         
Ponnuthurai Suganthan
Ponnuthurai Nagaratnam Suganthan is a computer science academic at the Nanyang Technological University, Singapore. He was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2015 for "contributions to optimization using evolutionary and swarm algorithms".
https://en.wikipedia.org/wiki/P._N._Suganthan
P–n junction         
  • A silicon p–n junction in reverse bias.
  • PN junction operation in forward-bias mode, showing reducing depletion width.
  • '''Figure B.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Under the junction, plots for the charge density, the electric field, and the voltage are reported. (The log concentration curves should actually be smoother, like the voltage.)
  • '''Figure A.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Electron and hole concentration are reported with blue and red lines, respectively. Gray regions are charge-neutral. Light-red zone is positively charged. Light-blue zone is negatively charged. The electric field is shown on the bottom, the electrostatic force on electrons and holes and the direction in which the diffusion tends to move electrons and holes. (The log concentration curves should actually be smoother with slope varying with field strength.)
  • [[Silicon]] atoms (Si) enlarged about 45,000,000x.
SEMICONDUCTOR–SEMICONDUCTOR JUNCTION, FORMED AT THE BOUNDARY BETWEEN A P-TYPE AND N-TYPE SEMICONDUCTOR
P-N junction; Reverse bias; Reverse-biased; Idiot Diode; P–N junction; PN junction; Pn junction; Pn-junction; Single-junction cell; P-n; Semiconductor junction; Pn Junction; Formation of a p-n Junction; P-n junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there.
https://en.wikipedia.org/wiki/P–n_junction
p-n junction         
  • A silicon p–n junction in reverse bias.
  • PN junction operation in forward-bias mode, showing reducing depletion width.
  • '''Figure B.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Under the junction, plots for the charge density, the electric field, and the voltage are reported. (The log concentration curves should actually be smoother, like the voltage.)
  • '''Figure A.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Electron and hole concentration are reported with blue and red lines, respectively. Gray regions are charge-neutral. Light-red zone is positively charged. Light-blue zone is negatively charged. The electric field is shown on the bottom, the electrostatic force on electrons and holes and the direction in which the diffusion tends to move electrons and holes. (The log concentration curves should actually be smoother with slope varying with field strength.)
  • [[Silicon]] atoms (Si) enlarged about 45,000,000x.
SEMICONDUCTOR–SEMICONDUCTOR JUNCTION, FORMED AT THE BOUNDARY BETWEEN A P-TYPE AND N-TYPE SEMICONDUCTOR
P-N junction; Reverse bias; Reverse-biased; Idiot Diode; P–N junction; PN junction; Pn junction; Pn-junction; Single-junction cell; P-n; Semiconductor junction; Pn Junction; Formation of a p-n Junction; P-n junction
¦ noun Electronics a boundary between p-type and n-type material in a semiconductor device, functioning as a rectifier.

ويكيبيديا

PIN diode

A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts.

The wide intrinsic region is in contrast to an ordinary p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications.

The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.

https://en.wikipedia.org/wiki/PIN diode
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